Carbonyl-functionalized thiophene compounds and related device structures

ABSTRACT

Carbonyl-functionalized oligo/polythiophene compounds, and related semiconductor components and related device structures.

This application-claims priority benefit of prior provisionalapplication Ser. No. 60/609,678 filed Sep. 14, 2004, the entirety ofwhich is incorporated herein by reference.

The United States government has certain rights to this inventionpursuant to Grant Nos. DMR-0076097, N00014-02-1-0909 and NCC 2-3163 fromthe National Science Foundation, the Office of Naval Research and theNASA Institute for Nanoelectronics and Computing, respectively, toNorthwestern University.

BACKGROUND OF THE INVENTION

The formidable building block for the development of (micro)electronicsduring the last one-half of the century is the field-effect transistor(FET) based on inorganic electrodes, insulators, and semiconductors.These materials have proven to be reliable, highly efficient, and withperformance that increases periodically according to the well-knownMoore's law. Rather than competing with conventional silicontechnologies, an organic FET (OFET) based on molecular and polymericmaterials may find large scale applications in low-performance memoryelements as well as integrated optoelectronic devices, such as pixeldrive and switching elements in active-matrix organic light-emittingdiode (LED) displays, RF-ID tags, smart-ID tags and sensors. Thesesystems have been widely pursued since they offer numerous advantagesfor easy evaporation/solution processing and good compatibility with avariety of substrates including flexible plastics, and greatopportunities for facile structural modifications. This trend is drivenby the demand for low-cost, large area, flexible, and lightweightdevices and the possibility to process these materials at much lowersubstrate temperatures as compared to the high substrate temperaturesfor typical inorganic semiconductors.

The simplest and most common OFET device configuration is that of athin-film transistor (TFT), in which a thin film of the organicsemiconductor is deposited on top of a dielectric with an underlyinggate (G) electrode. (See FIG. 1, with dimensions for purpose ofillustration only; and other configurations are possible.) In theexample shown, charge-injecting drain-source (D-S) electrodes providingthe contacts are defined either on top of the organic film(top-configuration) or on the surface of the FET substrate prior to thedeposition of the semiconductor (bottom-configuration). The currentbetween S and D electrodes is low when no voltage is applied between Gand D electrodes, and the device is in the so called ‘off’ state. When avoltage is applied to the gate, charges can be induced into thesemiconductor at the interface with the dielectric layer. As a result,the D-S current increases due to the increased number of chargecarriers, providing the ‘on’ state of a transistor. Key parameters incharacterizing a FET are the field-effect mobility (μ) which quantifiesthe average charge carrier drift velocity per unit electric field andthe on/off ratio (I_(on):I_(off)) defined as the D-S current ratiobetween the ‘on’ and ‘off’ states. For a high performance OFET, thefield-effect mobility and on/off ratio should both be as high aspossible.

Most of the OFETs operate in p-type accumulation mode, meaning that thesemiconductor acts as a hole-transporting material. However, for thefull development of the field, and for organic CMOS devices,high-performing electron-transporting (n-type) materials are needed aswell. For most practical applications, the mobility of the field-inducedcharges should be about 0.1-1 cm²/Vs or greater. To achieve highperformance, the organic semiconductors should satisfy stringentcriteria relating to both the injection and current-carrying phenomena,in particular: (i) the HOMO/LUMO energies of the individual molecules(perturbed by their placement in a crystalline solid) should be atlevels where holes/electrons may be added at accessible appliedvoltages; (ii) the crystal structure of the material should providesufficient overlap of the frontier orbitals (π stacking and edge-to-facecontacts) to allow charge to migrate among neighboring molecules; (iii)the compound should be highly pure since impurities act as chargecarrier traps; (iv) the molecules (in particular the conjugated coreaxes) should be preferentially oriented with their long axes close tothe FET substrate normal, as the most efficient charge transport occursalong the direction of intermolecular π-π stacking; and (v) the domainsof the crystalline semiconductor should cover uniformly the area betweensource and drain contacts, hence the film should have a singlecrystal-like morphology.

Among the organic semiconductors used in OFETs, the class of (oligo,poly)thiophenes are certainly one of the most investigated. The firstreport on a polyheterocycle-based FET was on polythiophene, andpoly(3-hexyl)thiophene and α,ω-dialkyloligothiophenes were the firsthigh-mobility polymer and small molecules, respectively. Over the years,chemical modification(s) of the thiophene core, variations inring-to-ring connectivity and substitution pattern have resulted in theproduction and testing of a considerably large number of thiophene-basedmaterials. However, with the exception of very fewα,ω-di(cyanomethanide-, perfluorohexyl, and perfluorophenyl)-substitutednTs, all of these materials are p-type semiconductors.

The synthesis of a large number of fluorocarbon-functionalizedoligothiophenes was recently described and compared themolecular/solid-state properties with the correspondingalkyl-substituted and the parent unsubstituted oligothiophenes. Allfluorocarbon-substituted oligothiophenes considered had largechemical/thermal stabilities, exhibit similar packing characteristics,strong π-π intermolecular interactions, and comparable LUMO energiesacross conjugation length. Furthermore, fluoroalkyl functionalization ofthe nT core significantly alters the electronic, film growth, andsemiconducting properties of the resulting films, and that a TFT devicewith these system as active layer operates in the n-type accumulationmode, indicating facile electron injection into the semiconductingmaterial. In addition, film growth morphologies were shown to stronglydepend on growth temperature and substrate functionalization. The fieldeffect mobilities measured in the saturated regime (V_(d)>V_(g))approach ≈0.3 cm²/Vs, the highest reported so far for organic n-typesemiconductors. See, U.S. Pat. No. 6,585,914 incorporated herein byreference in its entirety. However, such fluorocarbon substituents limitsubsequent structural modification and, in certain environments, presentconcerns regarding chemical stability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1. Schematic diagram of a thin film field effect transistorgeometry, known in the art.

FIGS. 2A-D. UV-vis/PL spectra of Ia (DFHCO-4T) and Ib (DHCO-4T).

FIG. 3. FET current-voltage characteristics of Ia and Ib under differentpositive gate-source biases (e.g., OV, 80V and 100V).

FIGS. 4A-B. UV-vis/Photoluminescence (PL) spectra of DHCO-4T, DFHCO-4Tand DFHCO-4TCO.

FIG. 5. Schematic diagram of an OFET device, with non-limitingsemiconductor compound(s), in accordance with this invention.

FIGS. 6A-D. I_(DS)-V plots for: A. DHCO-4T (n-type, vacuum). B. DHCO-4T(p-type). C. DFHCO-4T in vacuum (black) and air (gray). D. DFHCO-4TCOtransfer plots in vacuum (black) and air (light) at differentdrain-source/gate biases. V_(G)(V); a=0−±40, b=±60, c=±80, d=±100.

FIG. 7. Electron μ_(e) and hole μ_(h) mobilities vs. film depositiontemperature (T_(D)) for DHCO-4T (Δ), DFHCO-4T (*), and DFHCO-4TCO (•) invacuum. μ_(e) for DFHCO-4T is after I₂ vapor treatment.

FIG. 8. Illustrations of crystal structure and packing of adioxolane-protected quaterthiophene.

FIG. 9. UV-vis spectra of DFHCO-4TCO and 10 films and that of film 10after H₂O—HCl vapor treatment and annealing.

FIGS. 10A-D. With reference to examples 13a-13e, crystal structures of 1(A) and 2 (B) viewed perpendicular to the long axis of the unit cell(hydrogen atoms not shown). Note the remarkably similar herringbonepacking motif in 1 (C) and 2 (D) viewed along the long crystallographicaxis.

FIGS. 11A-B. Thin film x-ray diffraction patterns of 1 (A) and 2 (B)films vacuum deposited at indicated temperatures onto HMDS treated SiO₂(300 nm)/Si(100) substrates. All data beyond 2θ of 6.4° (dotted line)are expanded by a factor of 10 for clarity. Peaks are assigned from thepowder pattern calculated from the single c crystal structures using theprogram Mercury version 1.3.

FIG. 12. Thin film x-ray diffraction pattern of 1 solution cast fromxylenes (SC-120° C., purple) at 120° C. and vapor-deposited at T_(D)=90°C. (90° C., green) onto HMDS-treated SiO₂ (300 nm)/Si(100) substrates.All data beyond 2θ of 6.4° (dotted line) are expanded by a factor of 7for clarity. Peaks are assigned form the powder pattern calculated formthe single crystal structure using the program Mercury version 1.3.

FIGS. 13A-B. Output (A) and transfer (B) plots of an OFET fabricatedwith 1 vapor deposited at T_(D)=80° C.

FIGS. 14A-B. Output (A) and transfer (B) plots of an OFET fabricatedwith 1 solution cast at 120° C.

FIGS. 15A-B. Output (A) and transfer (B) plots of an OFET fabricatedwith 2 vapor deposited at T_(D)=90° C.

FIGS. 16A-B. Optimized DFT (Q-Chem 2.0^(‡)/DFT/B3LYP/6-31G*) geometiesof 1(a) and 2(b) viewed above the plane of the thiophene core (top) andin the thiophene core plane (bottom).

SUMMARY OF THE INVENTION

In light of the foregoing, it is an object of the present invention toprovide a range of compounds and/or related device structures, therebyovercoming various deficiencies and shortcomings of the prior art,including those outlined above. It will be understood by those skilledin the art that one or more aspects of this invention can meet certainobjectives, while one or more other aspects can meet certain otherobjectives. Each objective may not apply equally, in all its respects,to every aspect of this invention. As such, the following objects can beviewed in the alternative with respect to any one aspect of thisinvention.

It is an object of the present invention to provide variousoligo/polythiophene compounds exhibiting improved stability and chargetransport characteristics.

It can be an object of the present invention to provide one or morecompounds having an appropriate functionality, optionally meeting one ormore of the aforementioned criteria, for ready incorporation into aconjugated core, and as can be used for possible subsequent chemicalmodification.

It can be another object of the present invention to provide one or moreelectrical/transistor devises, including OFET devices, fabricated tocomprise a semi-conductor component comprising one or more suchcompounds, to promote electron mobility or a combination of electron andhole mobilities.

Other objects, features, benefits and advantages of the presentinvention will be apparent from this summary and the followingdescriptions of certain embodiments, and will be readily apparent tothose skilled in the art having knowledge of various semi-conductingcompounds and related device structures. Such objects, features,benefits and advantages will be apparent from the above as taken inconjunction with the accompanying examples, data, figures and allreasonable inferences to be drawn therefrom, alone or with considerationof the references incorporated herein.

In part, this invention can comprise compounds represented by structuralformulas I-V, as shown below.

wherein R¹, R² and R³ can be independently selected from H, alkyl,fluorosubstituted alkyl, aryl, heterocyclic and fluorosubstituted arylmoieties, said alkyl and fluorosubstituted alkyl moieties ranging fromabout C₂ to about C₁₀; each said x can be an integer independentlyranging from about 0 to about 8; and z can be an integer selected from 0and integers greater than 0, where at least one of x, y an z can beselected from 2 and integers greater than 2;

wherein R¹ can be selected from H, alkyl, fluorosubstituted heterocyclicalkyl, aryl and fluorosubstituted aryl moieties, said alkyl andfluorosubstituted alkyl moieties ranging from about C₂ to about C₁₀;each said x can be an integer independently ranging from 0 to about 4; yand y′ can be integers independently selected from 1 and integersgreater than 1; z can be an integer selected from 0 and integers greaterthan 0; each said v can be an integer independently selected from 1 and2; and each said w can be an integer independently selected from 0 and1, wherein at least one of said x and z can be 1, at least one of y andy′ is 1, and at least one of said v and said w is 1; and where v can be2

and where R¹ can be fluoro-substitutedphenyl

Two representative non-limiting examples of oligothiophene I are shownbelow: The diperfluorohexyl carbonyl (DFHCO) and dihexyl carbonyl (DHCO)substituted quaterthiophene (4T) compounds Ia and Ib, respectively.

More generally, the oligothiophene compounds of this invention can berepresented by structural formula V, below, where variablescorresponding structures I-IV are as described above and Ar can beselected from a y and/or y′ number of the aryl and fused aryl (e.g.,phenyl and/or thiophenyl) moieties shown in structures II-IV.

wherein R¹, R² and R³ can be independently selected from H, alkyl,fluorosubstituted alkyl, aryl heterocyclic, and fluorosubstituted arylmoieties, said alkyl and fluorosubstituted alkyl moieties ranging fromabout C₂ to about C₁₀; each said Ar can be an aryl moiety independentlyselected from phenyl, perfluorophenyl, diacylphenyl,diacylperfluorophenyl, and thiophenyl moieties; each said x can be aninteger independently selected from 0 to about 4; y and y′ can beintegers independently selected from 0 to about 4; z can be an integerselected from 0 to about 8; and a can be an integer ranging from 0 toabout 4, wherein at least one of said x, z and a is selected from 2 andintegers greater than 2; and each said w is an integer selected from 0and 1; and further, R² can be independently selected from C(O)R₁.

Without limitation, in certain embodiments, each of x can be 2, R₁ andR₂ can be H, y can be 1, y′, z, w and a can be 0, and Ar can bediacylperfluorophenyl. A corresponding polymer of such a compound can beof a formula

and prepared as discussed more fully below. In certain other embodimentsof such compounds/polymers, the 3- and/or 4-positions of one or morethiophenyl moieties can be substituted with alkyl, fluorosubstitutedalkyl, and/or fluorosubstituted alkylcarbonyl moieties, such moieties asdescribed above. Likewise, in certain other embodiments, alone or inconjunction with the foregoing, the diacyl moiety can, in thealternative, be phenyl or substituted at one or more positions with oneor more other halogen moieties. Such compounds can be used as describedbelow, alone or in combination with one or more other compounds of thisinvention, in the fabrication of OFET devices—including those comprisingsemiconductor components comprising one or more of the inventivecompounds exhibiting hole mobility, electron mobility, or both underoperating conditions.

DETAILED DESCRIPTION OF CERTAIN EMBODIMENTS

The present invention relates to novel classes of thiophene-basedmaterials substituted with one or more carbonyl moieties on theperiphery, on the terminal or lateral positions, and at positions alongthe oligo/polythiophene backbone. With reference to Scheme 1, the choiceof any carbonyl moiety of the sort described herein, or understood bythose skilled in the art made aware of this invention, can be consideredfor any one of the following reasons: 1) it is one of the strongestelectron-withdrawing groups (EWG), 2) in contrast to e.g., CN and NO₂groups, such a moiety allows additional syntheticmodifications/functionalization, 3) it can be part of the n-conjugatedcore, and 4) it prevents β-elimination of fluorine atoms when positionedin between a fluoroalkyl chain and a carbanion site.

Scheme 1. Effect of Carbonyl Substitution/Insertion.

The compounds of this invention have been characterized by a combinationof techniques including thermal analysis (DSC, TGA), molecularspectroscopy (NMR, UV-Vis, PL), and electrochemistry (CV, DPP). Resultsconfirm that all the thiophene-carbonyl modified systems are morechemically and thermally stable than the corresponding π-isoelectronicolgothiophenes and are highly volatile and soluble in common organicsolvents. FIG. 2 shows optical spectrum of THF solution andvacuum-deposited films. These data demonstrate that carbonyl-insertionallows for an effective modulation of optical absorption-emissionmaximum, optical gap, and photoluminescent efficiencies (quantum yields)both in solution and as thin-deposited films. The effect on the opticalspectra is much larger than that found for the correspondingdiperfluorohexyl and dihexyl carbonyl-free systems, DFH-4T and DH-4T,whose UV-Vis/PL spectra are almost superimposable.

Table 1 summarizes for purposes of comparison and illustration, theelectrochemical data of compounds Ia and Ib to that for thecorresponding non-carbonyl compounds of the prior art, DFH-4T and DH-4T.The reduction potential values decease of about 0.7-0.9 V. Reversibleoxidation potentials were not observed for the carbonyl series, possiblybut without limitation because of the low cation stability. TABLE 1Electrochemical data (vs. SCE) for the investigate oligothiophenes.Reduction Cathodic Anodic Half Compound E_(c1) E_(c2) E_(a1) E_(a2)E^(1/2) ₁ E^(1/2) ₂ DFH-4T −1.58 −1.82 −1.49 −1.69 −1.53 −1.75 DH-4T−2.01 −2.35 −1.89 −2.24 −1.95 −2.29 DFHCO-4T −0.93 −1.04 −0.83 −0.97−0.88 −1.01 DHCO-4T −1.19 −1.52 −0.93 −1.42 −1.06 −1.47

By combining such electrochemical and optical data, absolute orbitalenergies can be estimated. LUMO energies can be determined from thefirst reduction potentials and HOMO energies considering the opticalgap. As further shown below, modification of an all-thiophene frameworkby introduction of powerful carbonyl-containing electron-withdrawinggroups was found to decrease MO energy levels, allowing for an easierelectron injection. The impact of substitution on the morphology ofcorresponding thin films and single crystals of several compounds wasexamined by X-ray crystallography. Depending on chemical nature of thesystem, deposition method (evaporation, spin-coating, casing), substratetemperature and pretreatment, either highly ordered or amorphous solidscan be produced and incorporated into various semi-conductor componentsand related device structures.

More specifically, several new quaterthiophenes were synthesizedaccording to Scheme 3 and examples 10, 10a-10i, and characterized byconventional chemical and physical methods.

With reference to examples 10a-10i, cyclic voltammetry (Versus Fc⁺/Fc(0.54 vs. SCE/THF) using 0.1 M TBAPF₆ electrolyte), of 1-3 in THFreveals two reversible one-electron reduction processes [E₁/E₂ (V):DHCO-4T −1.06/−1.47; DFHCO-4T −0.88/−1.01; DFHCO-4TCO −0.65/−0.78],considerably less negative than unsubstituted α4T (−1.94/−2.07 V).UV-vis/PL data (FIG. 4) indicate that the C═O groups are effectivelyconjugated with the 4T core, and exhibit substantially red-shiftedabsorption/emission maxima [λ_(abs)/λ_(em) (nm): DHCO-4T 430/530;DFHCO-4T 465/550; DFHCO-4TCO 545/615] and HOMO-LUMO gap reductions[E_(g) (eV): DHCO-4T 2.6; DFHCO-4T 2.4; DFHCO-4TCO 2.2] vs. 4T[λ_(abs)/λ_(em)=391/450 m-n, E_(g)=2.8 eV]. From theelectrochemical/optical data HOMO/LUMO energies [E_(HOMO)/E_(LUMO) (eV)]are estimated as follows for DHCO-4T (−6.38/−3.78), DFHCO-4T(−6.36/−3.96) and DFHCO-4TCO (−6.39/−4.19) vs. α4T(E_(HOMO)/E_(LUMO)=−5.79/−2.90 eV). Note that compared to p-type α4T,the new systems exhibit a considerably larger depression of LUMO(˜0.9-1.3 eV) vs. HOMO (˜0.6 eV) energies, suggesting that carbonylfunctionalization of the core should more affect electron than holetransport. In contrast, on going from α4T to DFH-4T(E_(HOMO)/E_(LUMO)=−6.19/−3.31 eV) or DH-4T(E_(HOMO)/E_(LUMO)=−5.80/−2.89 eV) a uniform E_(HOMO)/E_(LUMO) shift isobserved in agreement with σ-EWD substituent effects. Theoretical andexperimental studies on carbonyl-functionalized (oligo)heteroaromaticsindicate that HOMO energies are less affected than LUMO's, since thelatter are more localized on the molecular core. In marked contrast, theLUMO fully extends to the C═O groups via S_(thiophene)→C═Ointramolecular charge transfer, enhancing substituent σ/π-EWD effects.Therefore, greater perturbation of the 1-3 LUMOs is expected, inexcellent agreement with the present electrochemical and optical data.

Such carbonyl-substituted oligothiophenes are thermally stable andundergo quantitative sublimation. Thin films are readily grown from thevapor phase under vacuum and have been characterized by XRD (revealingmolecular edge-on-substrate growth orientation), scanning electronmicroscopy, and FET I-V measurements. Top-contact FET devices werefabricated as described in the literature and elsewhere herein. Briefly,with respect to examples 10a-10i and 11, semiconductors 1-3 (˜50 nm)were vapor-deposited on HMDS-treated p-doped Si/SiO₂ substratesmaintained at temperatures (T_(D)) between 25-90° C. OFET fabricationwas completed by vapor-depositing source-drain Au contacts (˜50 nm).(See, schematically, FIG. 5.) Measurements were performed in air andvacuum (˜10⁻⁵ Torr), and the standard saturation FET equation (Eq. 1,below) employed to calculate carrier mobilities.

FIG. 6 shows typical drain-source current-voltage plots for 1-3-basedOFETs under different conditions. All of the new oligothiophenes exhibitvery high electron mobilities (μ_(e)) in vacuum, with average values asa function of deposition temperature (T_(D)) shown in FIG. 7. For somedevices μ_(e) as high as ˜0.65 cm² V⁻¹s⁻¹ has been measured.Interestingly, DHCO-4T films also exhibit relatively large hole (i.e.,p-type) mobilities (μ_(h) up to 0.01 cm² V⁻¹s⁻¹) at all depositiontemperatures. Ambipolar transport has been observed previously inblend/bilayers and single component OFETs but with modest figures ofmerit, large imbalances between μ_(e) and μ_(h), and only for narrowT_(D) ranges. DHCO-4T is the first organic conductor exhibitingunoptimized μ_(e)/μ_(h) values as high as ˜0.1/0.01 cm² V⁻¹s⁻¹. DFHCO-4Talso exhibits ambipolar behavior but only after I₂ vapor treatment. Moreelectron-deficient DFHCO-4T and DFHCO-4TCO are air-stable with μ_(e)'sexhibiting the same T_(D) dependence as in vacuum but with ˜5/10× lowermagnitudes. Thus, DFHCO-4TCO-based devices can be cycled many times inair without obvious degradation. From the transfer plots, very highI_(on):I_(off) ratios are observed for electrons, >10⁷. Maximum currentgains for holes is >10⁸ for DHCO-4T. The sub-threshold swings (S),indicating how sharply the devices turn on, are in the 1.3-4.9 V/decaderange and turn-on voltages |V₀| are ˜5-30 V.

Solution-processable semiconductors are attractive for low-cost printedelectronics applications. Toward that goal, it has been shown thatdioxolane-protected quaterthiophenes (e.g., 10, in scheme 3, theprecursor of DFHCO-4TCO) exhibit very high solubility in common organicsolvents due to reduced π-π core stacking (see crystal structure in FIG.8). Preliminary results, films of 10 can be readily converted toDFHCO-4TCO films by deprotection via H₂O—HCl vapor treatment/annealing(FIG. 9), affording films with μ_(e)˜10⁻⁴ cm² V⁻¹s⁻¹.

The combination of electron (n-type) materials with hole-transporters(p-type), or concurrent function from one or a combination of materials,will enable inexpensive, high throughput organic CMOS fabrication viaspin-coating, drop casting, and/or printing—in contrast to traditionalapproaches which are high cost, low throughput, and not readilyscalable. Two primary challenges exist for achieving such properties:(i) obtaining favorable crystal packing while allowing dissolution bycertain solvents, (ii) achieving n-type transport via appropriatemolecular electronic structure/orbital energetics and low-defect densityfilms.³ Post-deposition film processing and chemistries have beenexplored to address these issues with mixed results, since high purityand highly regular film morphology are essential. As further discussed,below, the present invention provides a new class of solubleoligothiophenes having high electron/hole mobilities both insolution-cast (e.g., μ_(e)˜0.25 cm²V⁻¹s⁻¹) and vapor-deposited (e.g.,μ_(e)˜0.5 cm²V⁻¹s⁻¹) films with very high current modulation (e.g.,I_(on):I_(off)>10⁵ and 10⁸, respectively). Furthermore, the structureand energetics of these molecular motifs can also be used as models forthe synthesis/characteristics of other n-type polythiophenes, inaccordance with this invention.

With reference to examples 13a-13e, below, quaterthiophenes 1 and 2 andpolythiophene 3, therein, were synthesized according to Scheme 4 andcharacterized by conventional chemical and physical methods. Crystals of1 and 2 suitable for X-ray diffraction were obtained by sublimation.They both crystallize in a herringbone motif (FIG. 10), with theshortest inter-core distance being 3.50 Å (C14-C15) and 3.43Å (C14-C16),respectively. The average dihedral angle between the phenyl substitutentand the adjacent thiophene subunit is ˜53° in 1 and ˜49° in 2. Thequaterthiophene core of 2 is more planar than that of 1 with a maximuminter-thiophene torsional angle of ˜4° versus ˜13° in 1. However, the 1carbonyl groups lie ˜6° out of the plane of the adjacent thiophene ringwhile in 2 this angle increases considerably to ˜17°.

Both semiconductors are thermally stable and undergo quantativesublimation at reduced pressure as indicated by differential scanningcalorimetry and thermogravimetric analysis. Films can be grown from thevapor phase and by solution casting from common solvents such asthiophene, toluene, and xylenes. Wide angle x-ray diffraction (WAXRD)indicates that vapor-deposited films are highly crystalline, having thesame phase observed in the crystal structure (FIG. 11). The progressionof Bragg reflections corresponds to a d-spacing of 27.62 Å(1) and 26.87Å(2). These spacings are consistent with half of the unit cell long axis(shown in FIG. 10), indicating an end-on-substrate molecularorientation, favorable for in-plane charge transport. As the substratetemperature during vapor phase film deposition (T_(D)) is increased from25 to 90° C., the films become more crystalline and minority crystalliteorientations, present at lower T_(D), are no longer observable by WAXRD.Diffraction patterns similar to the high T_(D) vapor-deposited films arealso observed for solution deposited films of 1 (FIG. 12).

As described elsewhere, herein, field effect transistors of 1, 2, and 3were fabricated with Au top-contact electrodes. Semiconductor films (50nm) were deposited onto temperature controlled HMDS-treated SiO₂/p⁺—Sisubstrates by vapor deposition and drop casting. A 50 nm layer of Au wasthen deposited through a shadow mask to define the source and drainelectrodes. (See example 14.) OFET characterization was preformed in ahigh vacuum probe station back-filled with Argon. High electronmobilities (μ_(e)) off ˜0.5 cm²V⁻¹s⁻¹ are observed for vapor deposited 1films (T_(D)=80° C.) with a threshold voltage (V_(T)) of ˜30 V(I_(on):I_(off)>10⁸, FIG. 13). This highly reproducible μ_(e) value isone of the largest reported to date, doubtless reflecting the favorablecrystal packing of this molecule. In solution cast devices, μ_(e) isexceptionally high with a maximum of ˜0.25 cm²V⁻¹s⁻¹(I_(on):I_(off)=10⁵; V_(T)=50-70 V, FIG. 14). This is the highest OFETelectron mobility for a solution cast semiconductor reported to date,surpassing that of the highest mobility n-type molecular^(1n) (0.01cm²V⁻¹s⁻¹) and polymeric (0.1 cm²V⁻¹s⁻¹) solution processablesemiconductors. The non-fluorinated system, 2, exhibits hole mobilities(μ_(h)) in vapor deposited films up to ˜0.04 cm²V⁻¹s⁻¹(I_(on):I_(off)=10⁵; V_(T)˜−20 V, FIG. 15), but no electron conductionis been observed. Films of this material drop-cast from xylenes haveμ_(h)3×10⁻⁴ cm²V⁻¹ s⁻¹. Similar dependencies of mobility on T_(D) areobserved in both semiconductors, consistent with the trend, observed byWAXRD, of increased crystallinity with increasing T_(D).

Cyclic voltammetry of the semiconductors in THF reveals two reversiblesingle-electron reductions (E₁/E₂ (V) vs. S.C.E.) at −1.05/−1.16 in 1and at −0.95/−1.30 in 2. Irreversible oxidative features are observed at+1.07/+1.22 for 1. UV-vis absorption in THF indicates that the opticalband gap (E_(g)) is ˜2.40 eV for 1 and ˜2.46 eV for 2. Surprisingly, E₁of n-type 1 is slightly more negative (0.1 V) than that of p-type 2.Based upon conventional understanding, redox processes, related to MOenergetics, are primary factors in determining majority charge carriertype—therefore, it is surprising that 1 exhibits electron mobility inthe solid state, while 2 preferentially conducts holes. Withoutlimitation, an explanation may lie in subtle crystal structure molecularconformational differences—the dihedral angle between theelectron-withdrawing carbonyl groups and the thiophene core(intrinsically p-type) is much greater in 2 than in 1. This may be aresult of crystal packing forces as the DFT-derived vacuum geometry(FIG. 16) indicates that the carbonyl oxygen lies closer in thethiophene plane for both molecules. The resulting greater conjugation in1 should enhance stabilization of the negatively charged core in thesolid-state. Since such packing effects are not present in solution, themolecular geometry and hence the electronic structure/energetics aremore similar—in agreement with MO computation and the electrochemistryexperiment.

Finally, polymer 3 (scheme 4, example 13e) is found to have goodsolubility in common solvents and forms high-quality films when spuncast from xylenes. In THF, 3 undergoes a reversible two electronreduction at −1.23 V plus an additional irreversible reduction at −1.60V and three single electron oxidations at +0.96/+1.13 V (reversible) and+1.40 V. While spin cast films of the neat polymer exhibit μ_(e)˜10⁻⁶cm²V⁻¹s⁻¹ (optimization in progress), an initial study revealed thatblends of 1 and 3 (500-1000 ppm, 1:1 wt. ratio from xylenes) yield filmswith a μ_(e) of ˜0.01 cm²V⁻¹s⁻¹ (I_(on):I_(off)=10⁴; V_(T)˜60 V). Suchblends are promising for OFET printing since the polymer adjustssolution rheology, while the molecular semiconductor enhances chargetransport.

As discussed above, new carbonyl-functionalized oligo/polythiopheneshave been prepared and characterized. A combination of one or morecarbonyl substituent(s) affects molecular and solid-state properties andaffords materials with unique properties. The results summarized abovedemonstrate the relationship between connectivity at the molecular leveland the collective electro-optical properties of organic solids, andshow compounds of this invention, in particular compounds I-V, areextremely useful materials for a range of opto-electronic applications.These materials possess low-lying LUMOs which allow/facilitate electroninjection/transport as well as HOMO energies compatible with respectablehole transport. For instance, OFETs fabricated by conventional methodsexhibit the largest oligothiophene thin-film μ_(e)'s found to date andapproach the performance of pentacene/SiO₂ OFETs.

EXAMPLES OF THE INVENTION

The following non-limiting examples and data illustrate various aspectsand features relating to the compounds and/or device structures of thepresent invention, including preparation of n-type thiophenesemiconductor compounds, as are available through the syntheticmethodologies described herein and by incorporated reference. Incomparison with the prior art, the present compounds and related devicesprovide results and data which are surprising, unexpected and contrarythereto. While the utility of this invention is illustrated through theuse of several compounds and related semiconductor components madetherefrom, it will be understood by those skilled in the art thatcomparable results are obtainable with various oligo/poly compoundsand/or semiconductor components, as are commensurate with the scope ofthis invention.

Example 1

Generally, 2-Thiophenylaldehyde and 2-bromothiophene are commerciallyavailable. The reagent 5,5′-bis(tri-b-butylstannyl)-2,2′-dithiophene wasprepared according to the known procedure (Wei, Y.; Yang, Y.; Yeh, J,-M.Chem. Mater. 1996, 8, 2659). With reference to Scheme 2 and examples2-7, compounds 1-4 are prepared as described below, enroute to thediperfluorohexyl and dihexyl compounds, DFHCO-4T and DHCO-4T,respectively.

While the synthetic techniques schematically illustrated here areprovided with reference to the compounds of examples 1-7, analogousprocedures or variations thereof—as provided elsewhere herein—can beused or modified as would be understood by those skilled in the art enroute to other carbonyl substituted/functionalized oligo/polythiophenes,in accordance with this invention.

Example 2

Perfluorohexyl-thien-2-yl-methanol (1). 1.6 M MeLi (15.9 mL) was addeddropwise to a solution of 5-thiophenyl aldehyde (2.80 g, 25.0 mmol) andperfluorohexyliodide (11.73 g, 26.3 g) in dry Et₂O (70 mL) at −78° C.with stirring. The mixture was stirred for additional 40 min andquenched with 3N HCl (70 mL). The organic layer was separated, washedwith water twice, dried over MgSO₄, and concentrated in vacuo. Columnchromatography of the residue over silica gel (hexane:ethyl acetate=1:1)yielded 1(6.20 g, 57%).

Example 3

Perfluorohexyl-(5-bromothien-2-yl)-methanol (2). Bromine (0.698 g) wasadded to a solution of 1 (1.80 g, 4.16 mmol) in CH₂Cl₂ (15 mL). Afterstirring overnight at room temperature, the mixture was neutralized withsaturated aqueous NaHCO₃ solution and extracted with CH₂Cl₂ (3×20 mL).The organic layers were combined, dried over MgSO₄, and concentrated invacuo (1.90 g, 89%).

Example 4

2-Perfluorohexylcarbonyl-5-bromothiophene (3). A CH₂Cl₂ solution ofcompound 2 (1.90 g, 3.72 mmol) and activated MnO₂ (5 g) was stirredovernight. The mixture was filtered with celite. The filtrate was driedover MgSO₄, and the solvent was evaporated in vacuum (1.85 g, 98%).

Example 5

5, 5′″-Diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2′″-quaterhiophene,DFHCO-4T, (Ia). A mixture of compound 3 (1.86 g, 3.66 mmol),5,5′-bis(tri-b-butylstannyl)-2,2′-dithiophene (1.36 g, 1.83 mmol), andtetrakis(triphenylphosphine)palladium(0) (0.13 g, 0.11 mmol) in dry DMF(10 mL) was deaerated three times with N₂. The reaction mixture wasstirred overnight at 100. ° C. during which time a precipitate formed.After cooling, the dark red solid was collected by filtration and washedseveral times with hexane, MeOH. Further purification was achieved bygradient vacuum sublimation (1.22 g, 65%). Elemental Analysis calcd forC₃₀H₈F₂₆O₂S₄ (%): C 35.24, H 0.79, F 48.30; found: C 35.13, H 0.84, F48.51; MS (EI): m/z (%) 1021.5 (100) [M⁺].

Example 6

2-Heptanoyl-5-bromothiophene (4). 2-Bromothiophene (1.63 g, 10.0 mmol)and heptanoyl chloride (1.78 g, 12.0 mmol) were dissolved in dry benzene(15 mL) and AlCl₃ was added in portions with stirring over 10 min. Theresulting dark brown solution was refluxed for 1 hr and left to cooldown to room temperature. The mixture was quenched with 2M HCl (15 mL)carefully while stirred. The organic layer was separated, washed with 2MHCl, 2M NaOH, and water, and passed through silica column (d=3 cm, I=8cm). The solution was dried over MgSO₄, and concentrated in vacuo (2.40g, 87%).

Example 7

5,5′″-Diheptanoyl-2,2′:5′,2″:5″,2′″-quaterhiophene, DHCO-4T, (Ib). Amixture of compound 4 (0.64 g, 2.33 mmol),5,5′-bis(tri-b-butylstannyl)-2,2′-dithiophene (0.744 g, 1.00 mmol), andtetrakis(triphenylphosphine)palladium(0) (0.07 g, 0.06 mmol) in dry DMF(5 mL) was deaerated three times with N₂. The reaction mixture wasstirred overnight at 100° C. during which time a precipitate formed.After cooling, the orange solid was collected by filtration and washedseveral times with hexane, MeOH. The solid was recrystalized in xyleneand dried in vacuum oven (120° C.) yielding pure compound (0.36 g, 65%).Elemental Analysis calcd for C₃₀H₃₄O₂S₄ (%): C 64.94, H 6.18; found: C64.80, H 6.21; MS (EI): m/z (%) 553.9 (100) [M⁺].

Example 8

In accordance with the preceding and following examples, various othercarbonyl-functionalized (e.g., heterocylacyl, etc.) oligothiophenecompounds of structures I-IV and/or V can be prepared using synthetictechniques of the sort described in the aforementioned incorporated '914patent or straight-forward modifications thereof, depending upon choiceof reagent or thiophene core, as would be understood by those skilled inthe art made aware of this invention.

Example 9

Field effect transistor devices were fabricated for compounds of thepreceding examples using a top-contact configuration. Thesesemiconductors were vacuum-deposited on top of HMDS-treated Si/SiO₂substrates kept at the temperature (T_(D)) of 25 and 70° C. To show theprecision of each measurement, the reported data are an average of atleast three devices tested at different area of the semiconductor layer.The electrical measurements were performed under vacuum (˜10⁻⁴ Torr).FIG. 3 shows typical drain-source current/voltage plots of compounds Iaand Ib operating at different gate bias. For the purposes of comparisonwith other organic FETs, the mobilities were calculated by standardfield effect transistor equations. In traditionalmetal-insulator-semiconductor FETs (MISFETs) there is typically a linearand saturated regime in the I_(DS) vs V_(DS) curves at different V_(G).At large V_(DS) the current saturates and is given by equation (1)(I _(DS))_(sat)=(WC _(i)/2L)μ(V _(G) −V _(t))²  (1)where L and W are the device channel length and width, respectively,C_(i) is the capacitance of the insulator (1×10⁻⁸ F/cm² for 300 nmSiO₂). The mobility and the threshold voltage (V_(t)) can be calculatedfrom the slope and intercept, respectively, of the linear section of theplot of V_(G) versus (I_(sd))^(1/2) (at V_(sd)=−100 V). FIG. 3 shows I-Velectrical characteristics of Ia and Ib. From these data n-typemobilities approaching 0.5 cm²/Vs, current on/off ratio of 10⁶-10⁷, andVt of ˜20V were obtained. Furthermore, devices of Ib exhibit ambipolarcharacteristics, meaning that a channel of both electrons and holes canbe induced upon applying a positive and negative bias to the gate-sourcecontacts, respectively.

Example 10

With respect to Scheme 3, below, and examples 10a-10i and 11, thereagent 2-thiophenylaldehyde and 2-bromothiophene are commerciallyavailable. The reagent 5,5′-bis(tri-b-butylstannyl)-2,2′-dithiophene wasprepared according to the known procedure (Wei, Y.; Yang, Y.; Yeh, J.-M.Chem. Mater. 1996, 8, 2659). Compound 8 was prepared following a knownprocedure (Brzezinski, J. Z.; Reynolds, J. R. Synthesis 2002, 8, 1053,respectively).

Example 10a

Synthesis of 5, 5′″-diheptanoyl-2,2′:5′,2″:5″,2′″-quaterhiophene(DHCO-4T, 1). A mixture of compound 4 (0.64 g, 2.33 mmol),5,5′-bis(tri-n-butylstannyl)-2,2′-dithiophene (0.744 g, 1.00 mmol), andtetrakis(triphenylphosphine)palladium(0) (0.07 g, 0.06 mmol) in dry DMF(5 mL) was deaerated three times with N₂. The reaction mixture wasstirred overnight at 100° C. during which time a precipitate formed.After cooling, the orange solid was collected by filtration and washedseveral times with hexane, then MeOH. The solid was recrystalized fromxylene and dried in vacuum oven (120° C.) yielding pure compound (0.36g, 65%). mp 290° C.; ¹H NMR (CD₂Cl₂) δ 7.60 (d, 2H, ²J=3.6 Hz), 7.25 (d,2H, ²J=3.6 Hz), 7.19 (d, 2H, ²J=3.6 Hz), 7.16 (d, 2H, ²J=3.6 Hz), 2.85(t, 4H, ³J=7.6 Hz), 1.72-1.70 (m, 4H), 1.36-1.31 (m, 12H), 0.88 (t, 4H,³J=6.0 Hz); Anal. Calcd for C₃₀H₃₄O₂S₄: C 64.94, H 6.18. Found: C 64.80,H 6.21; MS (EI): m/z (%) 553.9 (100) [M⁺].

Example 10b

Synthesis of 5,5′″-diperfluorohexylcarbonyl-2,2′:5′,2″:5″,2′″-quaterhiophene (DFHCO-4T, 2). A mixture of compound 3 (1.86 g, 3.66mmol), 5,5′-bis(tri-b-butylstannyl)-2,2′-dithiophene (1.36 g, 1.83mmol), and tetrakis(triphenylphosphine)palladium(0) (0.13 g, 0.11 mmol)in dry DMF (10 mL) was deaerated three times with N₂. The reactionmixture was stirred overnight at 100° C. during which time a precipitateformed. After cooling, the dark red solid was collected by filtrationand washed several times with hexane, then MeOH. Further purificationwas achieved by gradient vacuum sublimation (1.22 g, 65%). mp 248. ° C.;¹HNMR (CD₂Cl₂) 120° C. δ 7.93 (2H), 7.39 (2H), 7.32 (2H), 7.27 (2H);¹⁹FNMR (CD₂Cl₂) 120° C. δ −79.88 (6F), −113.42 (4F), −120.18 (8F),−121.62 (4F), −124.90 (4F). Anal. Calcd for C₃₀H₈F₂₆O₂S₄: C 35.24, H0.79, F 48.30. Found: C 35.13, H 0.84, F 48.51; MS (EI): m/z (%) 1021.5(100) [M⁺].

Example 10c

Synthesis of 2,7-[bis-(5-perfluorohexylcarbonylthien-2-yl)]-4H-cyclopenta[2,1-b:3,4-b′]-dithiophen-4-one(DFHCO-4TCO, 3). Molecule 7 (0.50 g, 0.46 mmol) was dissolved in 75 mLacetic acid while refluxing. After addition of concentrated HCl (2 mL),the solution turned from purple to brown, and a dark green precipitateformed immediately. The reaction was quenched with H₂O (20 mL). Thesolution was then decanted off while warm and the product was collectedas a dark green solid (0.45 g). The solid was washed with acetone (2×10mL) and chloroform (6×10 mL), dried overnight in vacuum oven, andpurified by gradient sublimation twice. The pure portion was collectedand washed with boiling chloroform (20 mL). The red solution wasdecanted leaving the product as a black solid. It was washed withchloroform and purified by gradient sublimation (0.265 g, 60% yield): mp297° C.; Anal. Calcd for C₃₁H₆F₂₆O₃S₄: C 35.51, H 0.58. Found: C 35.40,H 0.71; MS (EI, 70 eV) m/z: calcd (M⁺) for C₃₁H₆F₂₆S₄O₃, 1048.0; found,1048.0.

Example 10d

Synthesis of 2-heptanoyl-5-bromothiophene (4). The reagent of2-bromothiophene (1.63 g, 10.0 mmol) and heptanolyl chloride (1.78 g,12.0 mmol) were dissolved in dry benzene (15 mL) and AlCl₃ was added inportions with stirring over a period of 10 min. The resulting dark brownsolution was refluxed for 1 h and left to cool down to room temperature.The reaction mixture was quenched with 2M HCl (15 mL) while carefullystirring. The organic layer was separated, washed with 2M HCl, 2M NaOH,and water, and passed through silica column (d=3 cm, I=8 cm). Thecollected solution was dried over MgSO₄, and concentrated in vacuo (2.40g, 87%). ¹H NMR (CDCl₃): δ 7.44 (d, 1H, ²J=3.8 Hz), 7.10 (d, 1H, ²J=3.8Hz), 2.81 (t, 2H, ³J=7.4 Hz), 1.74-1.68 (m, 2H), 1.38-1.23 (m, 6H), 0.89(t, 3H, ³J=6.4 Hz); HRMS (EI, 70 eV) m/z: calcd (M⁺) for C₁₁H₁₅BrOS,274.00; found, 274.0016.

Example 10e

Synthesis of perfluorohexyl-thien-2-yl-methanol (5). MeLi (1.6 M, 15.9mL) was added dropwise to a solution of 5-thiophenyl aldehyde (2.80 g,25.0 mmol) and perfluorohexyliode (11.73 g, 26.3 g) in dry Et₂O (70 mL)at −78° C. with stirring. The mixture was stirred for additional 40 minand quenched with 3N HCl (70 mL). The organic layer was separated,washed with water twice, dried over MgSO₄, filtered, and concentrated invacuo. Column chromatography of the residue over silica gel(hexane:ethyl acetate=1:1) yielded 5 (6.20 g, 57%). ¹HNMR (CDCl₃): δ7.45 (d, 1H, ²J=4.5 Hz), 7.24 (d, 1H, ²J=3.0 Hz), 7.10-7.06 (dd, 1H,J=4.5, 3.8 Hz), 5.54-5.46 (m, 1H), 2.56 (d, 1H, ²J=5.7 Hz); HRMS (EI, 70eV) m/z: calcd (M⁺) for C₁₁H₅F₁₃OS, 431.99; found, 431.9838.

Example 10f

Synthesis of perfluorohexyl-(5-bromothien-2-yl)-methanol (6). Bromine(0.698 g, 4.37 mmol) was added to a solution of 1 (1.80 g, 4.16 mmol) inCH₂Cl₂ (15 mL). After stirring overnight at room temperature, themixture was neutralized with saturated aqueous NaHCO₃ solution andextracted with CH₂Cl₂ (3×20 mL). The organic layers were combined, driedover MgSO₄, filtered, and concentrated in vacuo (1.90 g, 89%). ¹H NMR(CDCl₃): δ 7.02 (d, 1H, ²J=3.7 Hz), 6.97 (d, 1H, ²J=3.8 Hz), 5.46-5.38(m, 1H), 2.64 (d, 1H, ²J=5.2 Hz); HRMS (EI, 70 eV) m/z: calcd (M⁺) forC₁₁H₄F₁₃BrOS, 509.90; found, 509.8945.

Example 10g

Synthesis of 2-perfluorohexylcarbonyl-5-bromothiophene (7). A solutionof compound 2 (1.90 g, 3.72 mmol) and activated MnO₂ (5 g) was stirredovernight. The mixture was filtered through Celite. The filtrate wasdried over MgSO₄, and the solvent evaporated in vacuum (1.85 g, 98%).The mixture was purified by sublimation; mp 27° C.; ¹H NMR (CDCl₃): δ7.74 (d, 1H, ²J=3.8. Hz), 7.23 (d, 1H, ²J=3.8 Hz); ¹⁹F NMR (CDCl₃) δ−81.20 (3F), −115.20 (2F), −121.77 (4F), −123.18 (2F), −126.53 (2F);Anal. Calcd for C₁₁H₂BrF₁₃OS: C 25.95, H 0.40. Found: C 26.11, H 0.54;MS (EI, 70 eV) m/z: (M+) calcd for C₁₁H₂BrF₁₃OS 509.8; found 509.8.

Example 10h

Synthesis ofspiro[4H-cyclopenta[2,1-b:3,4-b′]dithiophene-4,2′-[1,3]dioxolane],2,6-bis(tri-n-butylstannyl) (9).Spiro[4H-cyclopenta[2,1-b:3,4-b′]dithiophene-4,2′-[1,3]dioxolane] (1.71g, 7.35 mmol) was dissolved in dry THF (20 mL) under nitrogen and cooledto −78° C. Two equivalents of n-BuLi were added dropwise (5.92 mL, 14.85mmol) and the reaction mixture stirred for 30 min. The solution wasallowed to warm to room temperature and stirred for an additional 1.5 h.The resulting thick brown suspension was cooled again to −78° C. andtri-n-butyltin chloride (4.78 g, 14.7 mmol) was added. The solution wasthen stirred at room temperature for 4 h. The reaction was quenched with100 mL H₂O and extracted with hexane. The organic layer was washed withH₂O (6×50 mL) and dried over MgSO₄. After filtration, evaporation of thesolvent left a brown oil (5.7 g, 95. % yield): ¹H NMR (CDCl₃): δ 6.96(s, 2H), 4.33 (s, 4H), 1.57 (m, 12H), 1.33 (m, 12H), 1.10 (m, 12H),0.91, (t, 18H, ³J=6.8. Hz); HRMS (ACP₁, CH₂Cl₂) m/z: ((M+H)⁺) calcd forC₃₅H₆₀S₂O₂Sn₂, 814.4; found, 815.2.

Example 10i

Synthesis ofspiro[4H-cyclopenta[2,1-b:3,4-b′]dithiophene-4,2′-[1,3]dioxolane],2,6-bis-(5-perfluorohexyl carbonylthien-2-yl) (10). A mixture ofcompound 6 (2.00 g, 2.46 mmol), compound 3 (2.50 g, 4.91 mmol), andPd[PPh₃]₄ (0.193 g, 0.167 mmol) in dry DMF (60 mL) was stirred at 90° C.for 6 h. After 15 min a purple solid precipitated. Filtration of the redsolution left the disubstituted product as a dark green solid (2.18 g,81.04% yield). The solid was washed with ether (3×20 mL) and hexane(3×10 mL), dried overnight in vacuum oven, and purified by gradientsublimation: mp 218° C.; ¹H NMR (CDCl₃): δ 7.88 (2H), 7.32 (4H), 4.39(4H); ¹⁹F NMR (DMSO) −85.88 (6F), −119.69 (4H), −126.43 (8F), −127.85(4F), −131.21 (4F); Anal. Calcd for C₃₃H₁₀F₂₆O₄S₄: C 36.27, H 0.92.Found: C 36.15, H 1.01; MS (EI, 70 eV) m/z: (M+) calcd forC₃₃H₁₀F₂₆S₄O₄, 1092.4; found 1092.2.

Example 11

Device Fabrication and Thin Film Characterization. Prime grade n-dopedsilicon wafers (100) having 300 nm thermally grown oxide (ProcessSpecialties Inc.) were used as device substrates. They were rinsed withwater, methanol, and acetone before film deposition. Trimethylsilylfunctionalization of the Si/SiO₂ surface was carried out by exposing thesilicon wafers to hexamethyldisilazane (HMDS) vapor at room temperaturein a closed container under nitrogen overnight. Organic compounds weredeposited by either vacuum evaporation (pressures <10⁻⁵ Torr) at agrowth rate of 0.2-0.3 Ås⁻¹, or by casting films from THF solutions(concentrations 200-400 ppm, 10⁻⁴-10⁻²M). Evaporated films were 500 Åthick (as determined by a calibrated in situ quartz crystal monitor),and solution-cast films were variable and thicker, on the order ofmicrons. For solution depositions, a region of the substrate surface(˜1-2 cm²) was defined using 3M Novec™ EGC-1700 electronic coating(comparable to the previously used 3M FC-722 product) before casting.The room temperature or warm solution was transferred inside the definedarea and allowed to evaporate, with no special care taken to avoid dustin the environment (a clean hood is optional). For FET devicefabrication, top-contact electrodes (500 Å) were deposited byevaporating gold (pressure <10⁻⁵ Torr); channel dimensions were 50/100μm (L) by 5.0 mm (W). The capacitance of the insulator is 2×10⁻⁸ F/cm²for 300 nm SiO₂. TFT device measurements were carried out in acustomized vacuum probe station (8×10⁻⁵ Torr) or in air. Coaxial and/ortriaxial shielding was incorporated into Signaton probe stations tominimize the noise level. TFT characterization was performed with aKeithly 6430 subfemtoammeter and a Keithly 2400 source meter, operatedby a locally written Labview program and GPIB communication.

Example 12

Thin films were analyzed by X-ray film diffractometry (XRD), usingstandard θ-2θ techniques, with Cu Kα radiation and a monochromator. Allθ-2θ scans were calibrated in situ with the reflection of the Si (100)substrates. Films were coated with 3 nm of sputtered Au before analysisby scanning electron microscopy (SEM) using a Hitachi S4500 FEmicroscope.

Example 13

With reference to examples 13a-13e, and 14, and Scheme 4, all reagentswere purchased from commercial sources and used without furtherpurification unless otherwise noted. Ether and tetrahydrofuran weredistilled from Na/benzophenone, and carbon disulfide was distilled fromcalcium hydride prior to use. Conventional Schlenk techniques were usedand reactions carried out under N₂ unless otherwise noted. The reagents5,5′-bis(tributylstannyl)-2,2′-dithiophene and4,4′-dioctyl-2,2′-dithiophene were prepared following known procedures(Wei, Y.; Yang, Y.; Yeh, J.-M. Chem. Mater. 1996, 8, 2659).

Example 13a

(2,3,5,6-tetrafluorophenyl) (5-bromothien-2-yl)methanone. To a mixtureof perfluorobenzoyl chloride (2.51 g, 10.9 mmol) and 2-bromothiophene(1.86 g, 11.4 mmol) in carbon disulfide (80 mL), aluminum chloride (2.90g, 21.8, mmol) was added in portions over 10 min with vigorousmechanical stirring. The reaction mixture turned red and was stirred for2.5 h before being quenched with water (80 mL). The organics were thenseparated, the aqueous layer extracted with carbon disulfide (3×50 mL),and the combined organics washed with water (3×100 mL) and dried overMgSO₄. After filtration, the organics were concentrated in vacuo and thechromatographed on a silica gel column (hexane:ether=9:1) to yield 1.23g (32%) green crystals. mp 51-54° C.; ¹H NMR (DMSO): δ 7.78 (d, 2H,³J=3.6 Hz), 7.54 (d, 2H, ³J=4.4 Hz); ¹⁹F NMR (DMSO): δ −142.1 (m, 2H),−151.6 (m, 1H), −160.6 (m, 2H) Anal. Calcd for C₁₁H₂BrF₅OS: C 37.00, H0.56. Found: C 37.37, H 0.83; MS (EI): m/z (%) 355.8 (92) [M⁺].

Example 13b

5,5′″-bis(perfluorophenylcarbonyl)-2,2′,5′, 2″:5″,2′″-quaterthiophene(DFCO-4T, 1). A mixture of(2,3,5,6-tetrafluorophenyl)(5-bromothien-2-yl)methanone (6) (0.511 g,1.43 mmol), 5,5′-bis(tributylstannyl)-2,2′-dithiophene (0.532 g, 7.15mmol), and tetrakis(triphenylphosphine)palladium(0) (0.0250 g, 0.0215mmol) was degassed with nitrogen three times before 8 mL anhydrous DMFwas added. The reaction mixture was heated to 80° C. for 10 h withstirring. A red-brown precipitate formed and upon cooling was collectedby filtration, washed with hexanes (3×10 mL) and methanol (3×10 mL).Gradient sublimation (2×) afforded a bright orange crystalline material(0.305 g, 60%) with some crystals suitable for x-ray diffraction. mp291-294° C.; ¹H NMR (DMSO): δ 7.87 (d, 2H, ³J=3.2 Hz), 7.70 (d, 2H,³J=3.2 Hz), 7.60 (d, 2H, ³J=4.4 Hz), 7.54 (d, 2H, ³J=4.0 Hz); ¹⁹F NMR(DMSO): δ −142.3 (m), −152.0 (m), −160.7 (m); Anal. Calcd forC₃₀H₈F₁₀O₂S₄: C 50.14, H 1.12, F 26.11. Found: C 50.00, H 1.30, F 26.11;MS (EI): m/z (%) 717.8 (100) [M⁺].

Example 13c

(5-bromothien-2-yl)(phenyl)methanone. To a mixture of benzoyl chloride(2.81 g, 20.0 mmol) and 2-bromothiophene (3.42 g, 21.0 mmol) in carbondisulfide (120 mL) aluminum chloride (5.34 g, 40.0 mmol), was added inportions over 10 min with vigorous magnetic stirring. The reaction wasnext allowed to stir for 2.5 h before being quenched with 100 mL 1 M HCl(aq). The organics were separated, the aqueous layer extracted withcarbon disulfide (3×50 mL), and the combined organics washed with water(3×100 mL) and dried over MgSO₄. After filtration, the organics wereconcentrated in vacuo and the residue chromatographed on a silica gelcolumn (hexane:ether=9:1) to yield 5.14 g (96%) of yellow crystals. mp41-43° C.; ¹H NMR (CDCl₃): δ 7.84 (d, 2H, ³J=8.0 Hz), 7.62 (t, 1H,³J=7.2 Hz), 7.52 (t, 2H, ³J=7.5 Hz), 7.40 (d, 2H, ³J=3.5 Hz), 7.15 (d,2H, ³J=4.0 Hz).

Example 13d

5,5′″-bis(phenylcarbonyl)-2,2′:5′,2″:5″, 2′″-quaterthiophene (DPCO-4T,2). A mixture of 2-bromo-5-benzoylthiohene (1.07 g, 4.00 mmol),5,5′-bis(tributylstannyl)-2,2′-dithiophene (1.49 g, 2.00 mmol), andtetrakis(triphenylphosphine)palladium(0) (0.0693 g, 0.0600 mmol) wasdegassed with nitrogen three times before 20 mL anhydrous DMF was added.The reaction mixture was heated to 80° C. for 15 h with stirring. A deepred precipitate formed and upon cooling and was collected by filtration,then washed with hexanes (3×10 mL) and methanol (3×10 mL). Gradientsublimation (2×) afforded an orange-red crystalline material (0.689 g,64%) with some crystals suitable for x-ray diffraction. mp 307-310° C.;¹H NMR (DMSO): δ 7.85 (2H), 7.84 (2H), 7.67 (4H), 7.59 (2H), 7.53 (2H),7.48 (1H), 7.44 (1H); Anal. Calcd for C₃₀H₁₈O₂S₄: C 66.88, H 3.37.Found: C 66.93, H 3.42; MS (EI): m/z (%) 538.0 (100) [M⁺].

Example 13e

P(COFCO-4T) (3). A mixture of4,4′-dioctyl-5,5′-bis(tributylstannyl)-2,2′-dithiophene (0.969 g, 1.00mmol), 1,4-bis((5-bromothien-2-yl)carbonyl)-2,3,5,6-tetrafluorobenzene(0.530 g, 1.00 mmol), and tetrakis(triphenylphosphine)palladium(0) (34.7mg, 0.0300 mmol, 0.03 equiv.) was degassed with nitrogen three timesbefore 10 mL anhydrous DMF was added. The reaction mixture was thenheated to 110° C. for an additional 72 h during which time four equalamounts of tetrakis(triphenylphosphine)palladium(0) (34.7 mg, 0.0300mmol, 0.03 equiv.) were added at intervals of 12 h. After cooling, a redprecipitate was isolated by filtration through a 0.45 um filter andwashed with methanol (200 mL). The powder was next dissolved in CHCl₃,precipitated with methanol, and centrifuged to give black pellets whichbecame translucent red upon drying in a vacuum oven. This process wasrepeated three times to give 3 (342 mg) as translucent red flakessoluble in toluene, xylenes, trichlorobenzene, thiophene, and THF. Thismaterial has a M_(w) of 15,300 and M_(n) of 6100 by HT-GPC (140° C.,trichlorobenzene, calibrated vs. polystyrene). ¹H NMR (CDCl₃): δ 7.51(m, 2H), 7.13 (s, 1H); ¹⁹F NMR (CDCl₃): δ −138.97 (s), −139.03 (s);¹¹⁹Sn NMR δ −4.2 (s); Anal. Calcd for C₄₀H₄₀F₄O₂S₄: C 63.46, H 5.33.Found: C 63.20, H 5.44.

Example 14

Device Fabrication and Thin Film Characterization. Prime grade p-dopedsilicon wafers (100) having 300 nm thermally grown oxide (ProcessSpecialties Inc. and Montco Silicon Technologies Inc.) were used asdevice substrates. They were first rinsed with water, methanol, andacetone before film deposition. Trimethylsilyl functionalization of theSi/SiO₂ surface was carried out by exposing the silicon wafers tohexamethyldisilazane (HMDS) vapor at room temperature in a closedcontainer under nitrogen overnight. Organic compounds were deposited byeither vacuum evaporation (pressures <10⁻⁵ Torr) at a growth rate of0.2-0.3 Ås⁻¹, or by drop casting films from xylenes solutions(concentrations 200-1000 ppm). Polymer films were spin cast from xylenesor drop cast from a xylenes/triethylamine mixture (7:3 v/v), beforebeing annealed under high vacuum for 1 h at 100° C. Films of polymer andmolecule blends were cast from xylenes before annealing under the sameconditions. Evaporated films were 500 Å thick (as determined by acalibrated in situ quartz crystal monitor), and solution-cast films werevariable and thicker, on the order of microns. For solution depositions,the room temperature or warm solution was transferred onto thetemperature controlled substrate and allowed to slowly evaporate, withno special care taken to avoid dust or oxygen in the environment (aclean hood is optional). For FET device fabrication, top-contactelectrodes (500 Å) were deposited by evaporating gold (pressure <10⁻⁵Torr); channel dimensions were 50/100 μm (L) by 5.0 mm (W). Thecapacitance of the insulator is 2×10⁻⁸ F/cm² for 300 nm SiO₂. TFT devicemeasurements were carried out in a customized vacuum probe stationpumped down to (8×10⁻⁶ Torr) before being backfilled with Argon or inair. Coaxial and/or triaxial shielding was incorporated into Signatoneprobe stations to minimize the noise level. TFT characterization wasperformed with a Keithly 6430 sub-femtoamp meter and a Keithly 2400source meter, operated by a locally written Labview program and GPIBcommunication. Thin films were analyzed by wide-angle X-ray filmdiffractometry (WAXRD) on a Rikagu ATX-G using standard θ-2θ techniques,with Cu Kα radiation and a monochromator. All θ-2θ scans were calibratedin situ with the reflection of the Si (100) substrates.

1. A semiconductor compound of a formula

wherein R¹, R² and R³ are independently selected from H, alkyl,fluorosubstituted alkyl, heterocyclic, aryl and fluorosubstituted arylmoieties, said alkyl and fluorosubstituted alkyl moieties ranging fromabout C₂ to about C₁₀; each said x is an integer independently rangingfrom about 0 to about 8; and z is an integer selected from 0 andintegers greater than 0, where at least one of x, y an z is selectedfrom 2 and integers greater than
 2. 2. The compound of claim 1 whereineach said x and z are 0, and y is an integer ranging from about 4 toabout
 8. 3. The compound of claim 1 wherein R¹ is selected from alkyl,perfluoroalkyl, phenyl and perfluorophenyl moieties.
 4. The compound ofclaim 3 wherein each said x and z are 0, and y is an integer rangingfrom about 4 to about
 8. 5. The compound of claim 4 selected from


6. The compound of claim 1 incorporated into a semiconductor componentof an electronic device.
 7. The compound of claim 6 wherein saidcomponent comprises a composition comprising at least one of saidcompounds and a polymer enhancing solubility of said compound in asolvent.
 8. The compound of claim 4 selected from


9. A semiconductor compound of a formula

wherein R¹ is selected from H, alkyl, fluorosubstituted alkyl, aryl andfluorosubstituted aryl moieties, said alkyl and fluorosubstituted alkylmoieties ranging from about C₂ to about C₁₀; each said x is an integerindependently ranging from 0 to about 4; y and y′ is an integerindependently selected from 1 and integers greater than 1; z is aninteger selected from 0 and integers greater than 0; each said v is aninteger independently selected from 1 and 2; and each said w is aninteger independently selected from 0 and 1, wherein at least one ofsaid x and z is 1, at least one of y and y′ is 1, and at least one ofsaid v and said w is
 1. 10. The compound of claim 9 wherein R¹ isselected from alkyl, and fluorosubstituted alkyl, phenyl andfluorosubstituted phenyl moieties.
 11. The compound of claim 10 whereineach said x is 1, y is 1, z and y′ are 0, each said w is 1 and each saidv is
 1. 12. The compound of claim 11 wherein R′ is selected from alkyland perfluoroalkyl.
 13. The compound of claim 12 wherein R′ is selectedfrom hexyl and perfluorohexyl.
 14. The compound of claim 9 wherein R¹ isfluorosubstituted phenyl, said compound of a formula

wherein each said x, y, each said w and each said v are 1; z and y′ are0, and R′ is selected from H and F.
 15. The compounds of claim 14wherein R′ is F.
 16. A semiconductor compound of the formula

wherein R¹, R² and R³ are independently selected from H, alkyl,fluorosubstituted alkyl, heterocyclic, aryl and fluorosubstituted arylmoieties, said alkyl and fluorosubstituted alkyl moieties ranging fromabout C₂ to about C₁₀; each said Ar is an aryl moiety independentlyselected from phenyl, perfluorophenyl, diacylphenyl,diacylperfluorophenyl, and thiophenyl moieties; each said x is aninteger independently selected from 0 to about 4; y and y′ are integersindependently selected from 0 to about 4; z is an integer selected from0 to about 8; and a is an integer ranging from 0 to about 4, wherein atleast one of said x, z and a is selected from 2 and integers greaterthan 2; and each said w is an integer selected from 0 and
 1. 17. Thecompound of claim 16 wherein R¹ is selected from H, alkyl,perfluoroalkyl, phenyl and perfluorophenyl; each said w is 1; each saidx is selected from 2 to about 4; and y, y′, z and a are
 0. 18. Thecompound of claim 17 wherein R¹ is selected from phenyl andperfluorophenyl.
 19. The compound of claim 18 blended with a polymerenhancing the solvent solubility of said compound.
 20. The compound ofclaim 19 wherein said blended composition is incorporated into thesemiconductor component of an electronic device.
 21. The compound ofclaim 16 wherein R¹ is selected from H, alkyl, perfluoroalkyl, phenyland perfluorophenyl; each said w is 1; each said x is selected from 2 toabout 4; y′, z and a are 0; each said Ar is selected from phenyl,diacylphenyl, fluorosubstituted phenyl and diacylperfluorophenyl; and yis
 1. 22. The compound of claim 21 wherein each said w is 0, R¹ is H andeach said x is
 2. 23. The compound of claim 22 selected from compoundswherein Ar is diacylperfluorophenyl and polymers of said compound. 24.The compound of claim 21 wherein Ar is perfluorophenyl.
 25. An organicfield effect transistor device comprising a semiconductor componentcomprising a compound selected from compounds of claims 1, 9 and 16 andcombinations of said compounds.
 26. A device of claim 25 wherein saidsemiconductor component comprises at least one compound exhibiting holeand electron mobilities under device operation conditions.
 27. Thedevice of claim 25 wherein said semiconductor component is fabricatedwith a composition comprising at least one of said compounds and apolymer enhancing solvent solubility of said compounds.
 28. The deviceof claim 25 comprising a semiconductor component comprising at least onesaid compound exhibiting hole mobility and at least one said compoundexhibiting electron mobility, under device operation conditions.